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Electron heating effect on transport properties in SiSiGe modulation doped structures grown by gas source molecular beam epitaxy

✍ Scribed by A. Matsumura; T.J. Thornton; J.M. Fernández; S.N. Holmes; J. Zhang; B.A. Joyce


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
311 KB
Volume
157
Category
Article
ISSN
0022-0248

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