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Electron correlation effects at semiconductor interfaces: a comparison of the Si(111)-3×3 and the Sn/Ge(111)-3×3 reconstructions

✍ Scribed by R. Pérez; J. Ortega; F. Flores

Book ID
108416249
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
120 KB
Volume
166
Category
Article
ISSN
0169-4332

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Electron correlation effects at Sn/Si(1&
Electron correlation effects at Sn/Si(1 1 1)–3×3,3×3 and Sn/Ge(1 1 1)–3×3,3×3 reconstructions
✍ F. Flores; J. Ortega; R. Pérez; A. Charrier; F. Thibaudau; J.-M. Debever; J.-M. 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 150 KB

Electron correlation eects for the two-dimensional electron gas associated with the surface bands of the Sn/Si(1 1 1)±3  3, 3 p  3 p , Sn/Ge(1 1 1)±3  3 and 3 p  3 p reconstructions are analyzed. Unrestricted local-density-approximation (LDA) calculations enable to de®ne a many-body hamiltonian