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Electron correlation effects at Sn/Si(1 1 1)–3×3,3×3 and Sn/Ge(1 1 1)–3×3,3×3 reconstructions

✍ Scribed by F. Flores; J. Ortega; R. Pérez; A. Charrier; F. Thibaudau; J.-M. Debever; J.-M. Themlin

Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 150 KB
Volume: 67
Category: Article
ISSN: 0079-6816
DOI: 10.1016/s0079-6816(01)00031-4

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✦ Synopsis

Electron correlation eects for the two-dimensional electron gas associated with the surface bands of the Sn/Si(1 1 1)±3 Â 3, 3 p Â 3 p , Sn/Ge(1 1 1)±3 Â 3 and 3 p Â 3 p reconstructions are analyzed. Unrestricted local-density-approximation (LDA) calculations enable to de®ne a many-body hamiltonian that includes intra-and inter-site electron interactions. From the analysis of this hamiltonian, it can be concluded that the 3 p Â 3 p reconstructions present a Mott transition, while the 3 Â 3 surface remains metallic. How these results can be used to to discriminate between con¯icting models explaining the 3 p Â 3 p 3 3 Â 3 phase transition is described. Inverse photoemission data for the Sn/Si(1 1 1) surface suggests that this phase transition can be explained by means of a dynamical ¯uctuations model.

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✦ Synopsis

Electron correlation effects at Sn/Si(1 1 1)–3×3,3×3 and Sn/Ge(1 1 1)–3×3,3×3 reconstructions