Electron confinement in strongly coupled GaN/AlN quantum wells
β Scribed by Tchernycheva, M.; Nevou, L.; Doyennette, L.; Julien, F. H.; Guillot, F.; Monroy, E.; Remmele, T.; Albrecht, M.
- Book ID
- 118140222
- Publisher
- American Institute of Physics
- Year
- 2006
- Tongue
- English
- Weight
- 491 KB
- Volume
- 88
- Category
- Article
- ISSN
- 0003-6951
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π SIMILAR VOLUMES
Vertically stacked quantum point contacts (QPCs) are prepared by atomic force microscope (AFM) lithography from an asymmetric GaAs/AlGaAs double quantum well (DQW) heterostructure. Top-and back-gate voltages are used to tune the tunnel-coupled QPCs, and back-gate bias cooling is employed to investig
The conditions are found for the existence of polar surface vibrational modes on a spheroidal quantum dot. These conditions determine allowed windows in the frequency-surface coordinate plane. The modes found are either truly localized of leaky states. The latter can provide e ective energy relaxati