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Electron Capture on EL2 in GaAs

โœ Scribed by T. Neffati; J. C. Bourgoin


Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
149 KB
Volume
203
Category
Article
ISSN
0370-1972

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Thermally activated de-excitation of the
โœ P. Trautman; M. Kamiล„ska; J. M. Baranowski ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 265 KB

Measurements of absorption in the near infrared have been performed on n-type and undoped semi-insulating GaAs containing EL2 the main native defect in GaAs. The whole band of absorption related to EL2 disappeared after 1 pm light illumination when the crystal was cooled to helium temperatures. Meas