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Optical properties of EL2 family in GaAs

โœ Scribed by B.L. Zhou; B.H. Hu


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
128 KB
Volume
40-41
Category
Article
ISSN
0022-2313

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Thermally activated de-excitation of the
โœ P. Trautman; M. Kamiล„ska; J. M. Baranowski ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 265 KB

Measurements of absorption in the near infrared have been performed on n-type and undoped semi-insulating GaAs containing EL2 the main native defect in GaAs. The whole band of absorption related to EL2 disappeared after 1 pm light illumination when the crystal was cooled to helium temperatures. Meas