Electron-beam-induced patterning of thin film arsenic-based chalcogenides

✍ Scribed by K Mietzsch; A.G Fitzgerald

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 312 KB
• Volume: 162-163
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00234-8

✦ Synopsis

Amorphous chalcogenides in contact with silver possess a remarkable sensitivity to radiation and have therefore been widely investigated. The present study concentrates on an investigation of nanometer dimension silver lines that can be formed by scanning a focused electron beam across the surface of As Se rAg and As S rAg films. The influence of

different parameters, such as film thickness, silver content and exposure conditions, has been systematically studied. It was found that the width and height of these lines depend strongly on the accelerating voltage and the deposition order. The best width-to-height ratio could be obtained for As Se rAg films of ca. 100 nm thickness at an accelerating voltage of 15 kV.