𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electron Beam Induced Leakage Currents in Silicon Nitride Thin Films

✍ Scribed by Gunkel, C. ;Schalch, D. ;Scharmann, A.

Publisher
John Wiley and Sons
Year
1982
Tongue
English
Weight
205 KB
Volume
69
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Gate induced leakage and drain current o
Gate induced leakage and drain current offset in organic thin film transistors
✍ Huiping Jia; Gaurang K. Pant; Erich K. Gross; Robert M. Wallace; Bruce E. Gnade πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 172 KB

Gate bias induced leakage current and drain current offset limit device performance in poly 3-hexylthiophene (P3HT) organic thin film transistors (OTFTs). The drain current offset distorts the drain current in the linear region of the transistor performance curve, making it difficult to extract devi