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Electron beam induced defects in Ge-implanted SiO2 layers

✍ Scribed by Roushdey Salh; A. von Czarnowski; H.-J. Fitting

Book ID
104557034
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
142 KB
Volume
2
Category
Article
ISSN
1862-6351

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Thermally grown, 200 nm thick layers of SiO 2 were double implanted with Ge + and Sn + ions in turn and the resulting SiO 2 (Ge+Sn)/ Si structures were annealed at 400-900Β°C for 30 min. Using transmission electron microscopy (TEM) and electron diffraction (TED), clear evidence is found that the laye