Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection

✍ Scribed by A.N. Nazarov; I.N. Osiyuk; V.S. Lysenko; T. Gebel; L. Rebohle; W. Skorupa

• Book ID: 108361931
• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 713 KB
• Volume: 42
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/s0026-2714(02)00170-1