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Electron beam-induced current investigation of GaN Schottky diode

✍ Scribed by A. Matoussi; T. Boufaden; S. Guermazi; Y. Mlik; B. El Jani; A. Toureille


Book ID
107453388
Publisher
Springer US
Year
2005
Tongue
English
Weight
149 KB
Volume
34
Category
Article
ISSN
0361-5235

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Temperature variation of current–voltage
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Current-voltage (I-V) characteristics of Au/Ni/n-GaN Schottky diodes have been measured in 40-320 K temperature range, and analyzed in terms of thermionic emission theory by incorporating the concept of barrier inhomogeneity at the metal/semiconductor interface through a Gaussian distribution functi