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Electromechanical effects in electron structure for GaN/AlN quantum dots

✍ Scribed by Lassen, B; Willatzen, M; Barettin, D; Melnik, R V N; Voon, L C Lew Yan


Book ID
120398678
Publisher
Institute of Physics
Year
2008
Tongue
English
Weight
564 KB
Volume
107
Category
Article
ISSN
1742-6588

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Within the framework of effective-mass approximation, exciton states confined in zinc-blende GaN/AlN quantum dot (QD) are investigated by means of a variational approach, including three-dimensional confinement of the electron and hole in the QD and finite band offsets. Numerical results show that t