𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electrolytic etching and electron mobility of GaAs for FET's

✍ Scribed by D.L. Rode; B. Schwartz; J.V. DiLorenzo


Publisher
Elsevier Science
Year
1974
Tongue
English
Weight
337 KB
Volume
17
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Yield sensitivity study of A1GaAs/GaAs h
✍ Sarker, Jogendra C. ;Purviance, John E. πŸ“‚ Article πŸ“… 1992 πŸ› John Wiley and Sons 🌐 English βš– 1003 KB

## Abstract A simple graphical statistical method is presented and is used to study the statistical sensitivity of the AlGaAs/GaAs High Electron Mobility Transistor (HEMT) small‐signal performances to physical model parameters, Using an analytical model and applying numerical techniques, the small‐