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Electroluminescence and forward bias currents in amorphous silicon p-i-n diodes: the effect of steady state bias and large i-layer thickness

✍ Scribed by R. Carius; F. Becker; R. Brüggemann; H. Wagner


Book ID
115990873
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
507 KB
Volume
198-200
Category
Article
ISSN
0022-3093

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