𝔖 Bobbio Scriptorium

✦ LIBER ✦

Electrode parasitic capacitances in self-aligned and deep-recessed GaAs MESFETs

✍ Scribed by A.K. Goel

Book ID: 103395171
Publisher: Elsevier Science
Year: 1988
Tongue: English
Weight: 504 KB
Volume: 31
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(88)90017-2

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Threshold voltage shift in 0.1 μm self-a

Threshold voltage shift in 0.1 μm self-aligned-gate GaAs MESFETs under bias stress and related degradation of ultra-high-speed digital ICs

✍ Yoshino K. Fukai; Kimiyoshi Yamasaki; Kazumi Nishimura 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 184 KB