## Abstract While electrochemical pore etching in semiconductors has become a thriving field for research (and applications) in the past 15 years or so, little work has been done in Ge. Besides Si, Ge is the only semiconductor with a diffusion length large enough to enable the use of backside illum
Electrochemical pore etching in Ge
✍ Scribed by Langa, S. ;Christophersen, M. ;Carstensen, J. ;Tiginyanu, I. M. ;Föll, H.
- Book ID
- 105362291
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 181 KB
- Volume
- 195
- Category
- Article
- ISSN
- 0031-8965
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