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Electrochemical doping for lowering contact barriers in organic field effect transistors

✍ Scribed by Stefan Schaur; Philipp Stadler; Beatriz Meana-Esteban; Helmut Neugebauer; N. Serdar Sariciftci


Book ID
113834506
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
953 KB
Volume
13
Category
Article
ISSN
1566-1199

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Electrochemical interface doping is introduced as a new concept for the realization of organic light‐emitting field‐effect transistors (O‐LEFTs). In a bottom contact tetracene transistor a 2–4 nm poly(ethylene‐oxide) layer with lithium triflate was inserted as interface layer between the gate‐oxide