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Electro-optical measurement of low temperature GaAs

✍ Scribed by K.P. Korona; M. Kamińska; J.M. Baranowski; E.R. Weber


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
288 KB
Volume
22
Category
Article
ISSN
0921-5107

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Low-temperature (LT) GaAs FETs have been realized for high I X V products. They have been extensii:ely characterized under dc, rJ pulsed, and large-signal conditions. The results are analyzed and related to the decice structure. The electricalpassiuant role of the LT GaAs has been demonstrated. Unde