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Electrically active centers induced by electron irradiation in n-type si detectors

✍ Scribed by A. Ögmundsson; E.V. Monakhov; T.E. Hansen; J.K. Grepstad; B.G. Svensson


Book ID
104065753
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
167 KB
Volume
552
Category
Article
ISSN
0168-9002

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The effect of 12 MeV electron irradiation of p-type Si-SiO 2 structures is studied by Deep Level Transient Spectroscopy (DLTS) measurements. The DLTS spectra of non-irradiated samples exhibit one peak only corresponding to a deep level located in the forbidden gap at 0.56 eV above the valence band e