𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electrical transport properties and room-temperature positive magnetoresistance of Fe3O4/a-C/n-Si junctions

✍ Scribed by Z.W. Fan; P. Li; L.T. Zhang; W.B. Mi; E.Y. Jiang; H.L. Bai

Book ID
113937526
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
676 KB
Volume
520
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Electrical insulation properties of sput
Electrical insulation properties of sputter-deposited SiO2, Si3N4and Al2O3films at room temperature and 400 Β°C
✍ Bartzsch, Hagen ;Glâß, Daniel ;Frach, Peter ;Gittner, Matthias ;Schultheiß, Eber πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 806 KB

## Abstract In this paper the breakdown field strength and resistivity of sputter‐deposited Al~2~O~3~, SiO~2~ and Si~3~N~4~ layers are investigated in the temperature range between room temperature and 400 Β°C. All the investigated layers showed excellent insulation properties, even at elevated samp