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Electrical Transport and Photoelectronic Properties of ZnTe:Al Crystals

✍ Scribed by Larsen, T. L.


Book ID
121851021
Publisher
American Institute of Physics
Year
1972
Tongue
English
Weight
957 KB
Volume
43
Category
Article
ISSN
0021-8979

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Photoconductivity of a non-intentionally doped GaN layer is observed for above band gap excitation. No below band gap excitation causes photoconductivity, but photoconductivity is optical quenched at energies of 1.28, 1.41, 1.53 and %2eV. The dark current and the yellow photoluminescence band show t