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Electrical Properties of ZnSe Epilayers on GaAs(001)

โœ Scribed by Yu.G. Sadof'ev; V.G. Litvinov


Book ID
111567000
Publisher
SP MAIK Nauka/Interperiodica
Year
2000
Tongue
English
Weight
45 KB
Volume
36
Category
Article
ISSN
0020-1685

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Growth of high quality of ZnSe epilayers
โœ Jin-Sang Kim; Jong-Hyeng Song; Sang-Hee Suh ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 247 KB

We have investigated the structural properties of ZnSe epilayers that were grown by molecular beam epitaxy on (001) GaAs substrate with different tilt angles. Two-dimensional growth mode increased with increasing tilt of (001) GaAs toward [010] direction. This was confirmed by atomic force microscop