โ Scribed by E.H.C. Parker; D. Williams
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Device for optically exciting XeF and other rare gas excited complexes. (USA) -A device is described in which Xe is onticallv numned (147 nm) and reacted with NFB to form XeF. The same apparatus can be used to pump Kr and Ar and thereby form excited rare gas halides, oxides and sulphides. The device
Y 2 O 3 thin films were deposited by ion beam assisted deposition (IBAD) and the effects of fabrication parameters such as substrate temperature and ion energy on the structure, optical and electrical properties of the films were investigated. The results show that the deposited Y 2 O 3 films had le
Boron and boron phosphide films were prepared by gas source molecular beam deposition on sapphire crystal at various substrate temperatures up to 800ยฐC using cracked B 2 H 6 (2% in H 2 ) at 300ยฐC and cracked PH 3 (20% in H 2 ) at 900ยฐC. The substrate temperatures and gas flow rates of the reactant g