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Electrical Properties of Ti/Au/SiO2/InP Structures

✍ Scribed by Patel, M. ;Ravindra, N. M.


Book ID
105383463
Publisher
John Wiley and Sons
Year
1992
Tongue
English
Weight
391 KB
Volume
134
Category
Article
ISSN
0031-8965

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Deep Level Transient Spectroscopy (DLTS) studies have been carried out on Au/SiO 2 /InP Me-tal±Oxide±Semiconductor (MOS) diodes. Majority and minority carrier traps have been observed for the room temperature SiO 2 deposited samples. The effect of substrate temperature during SiO 2 deposition has be