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Electrical Properties of the Cu2FeGeSe4 Compound

✍ Scribed by G. Sánchez Porras; M. Quintero; R. Barrios; J. Gonzalez; R. TovarSánchez Porras; J. Ruiz

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
162 KB
Volume
215
Category
Article
ISSN
0370-1972

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✦ Synopsis

The electrical transport properties of a polycrystalline sample of Cu 2 FeGeSe 4 magnetic semiconductor compound are studied in the temperature range between 100 and 300 K. From the analysis of the electrical data, the values of the activation energy E A , the density of states effective mass of the holes m p , the concentration of the ionized impurities N I , the sound velocity v and the valenceband deformation potential E ac for the compound are estimated.

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Crystallographic and Magnetic Properties
Crystallographic and Magnetic Properties of Cu2FeGeSe4 and Cu2FeGeTe4 Compounds
✍ M. Quintero; R. Tovar; A. Barreto; E. Quintero; A. Rivero; J. Gonzalez; G. Sánch 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 194 KB

X-ray powder diffraction measurements, at room temperature, and magnetic susceptibility c measurements, in the temperature range from 2 to 300 K, were made on polycrystalline samples of Cu 2 FeGeSe 4 and Cu 2 FeGeTe 4 magnetic semiconductor compounds. Magnetization measurements at 2, 4.2 and 77 K in