Annealing mechanisms of divacancies in s
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R. Poirier; V. Avalos; S. Dannefaer; F. Schiettekatte; S. Roorda
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Article
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2003
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Elsevier Science
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English
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By combining infrared and positron annihilation spectroscopy new insight has been gained into the mechanism(s) by which divacancies in silicon anneal. Isothermal and isochronal annealings of 8 MeV proton irradiated Si strongly suggest two processes, one due to recombination with interstitials and th