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Electrical properties of silicon with divacancies

โœ Scribed by Kholodar, G. A. ;Vinetskii, V. L.


Publisher
John Wiley and Sons
Year
1975
Tongue
English
Weight
323 KB
Volume
30
Category
Article
ISSN
0031-8965

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๐Ÿ“œ SIMILAR VOLUMES


Annealing mechanisms of divacancies in s
โœ R. Poirier; V. Avalos; S. Dannefaer; F. Schiettekatte; S. Roorda ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 204 KB

By combining infrared and positron annihilation spectroscopy new insight has been gained into the mechanism(s) by which divacancies in silicon anneal. Isothermal and isochronal annealings of 8 MeV proton irradiated Si strongly suggest two processes, one due to recombination with interstitials and th