Annealing mechanisms of divacancies in silicon

✍ Scribed by R. Poirier; V. Avalos; S. Dannefaer; F. Schiettekatte; S. Roorda

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 204 KB
• Volume: 340-342
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2003.09.240

✦ Synopsis

By combining infrared and positron annihilation spectroscopy new insight has been gained into the mechanism(s) by which divacancies in silicon anneal. Isothermal and isochronal annealings of 8 MeV proton irradiated Si strongly suggest two processes, one due to recombination with interstitials and the other due to vacancy agglomeration. The two processes have nearly the same activation energy.