Electrical properties of p-type CuInSe2 single crystals
β Scribed by Neumann, H. ;Tomlinson, R. D. ;Nowak, E. ;Avgerinos, N.
- Publisher
- John Wiley and Sons
- Year
- 1979
- Tongue
- English
- Weight
- 205 KB
- Volume
- 56
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract Both pβtype and nβtype CuInSe~2~ single crystals were implanted with 40 keV ^130^Xe^+^ ions up to doses of 5 Β· 10^16^ cm^β2^. Implanted layers on pβtype substrates showed an initial increase of the resistivity followed by a continuous decrease of the resistivity at higher doses. Implant
Optical absorption spectra in the photon energy range from 0.03 to 1. I eV and photoreflectance spectra in the range of the fundamental edge are measured on p-type CuInSez single crystals. Besides a dominant contribution to the absorption coefficient due to intervalence band transitions below about