Electrical properties of n-Type GaN
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Doz. Dr. sc. Hans Neumann
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Article
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1977
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John Wiley and Sons
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English
β 292 KB
## Abstract The electron mobility in GaN is calculated as function of the carrier and impurity concentrations. From a comparison of the theoretically calculated mobilities with electrical parameters measured experimentally it follows that native donor and acceptor concentrations of the same order o