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Electrical properties of n-type and p-type inp grown by the synthesis, solute diffusion technique

✍ Scribed by Siegel, W. ;Kühnel, G. ;Koi, H. ;Geelach, W.

Publisher: John Wiley and Sons
Year: 1986
Tongue: English
Weight: 513 KB
Volume: 95
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210950139

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## Abstract The effects of rapid thermal annealing on the electrical and structural properties of Pd/Au Schottky contacts to n‐type InP(111) have been investigated by current–voltage (__I__ –__V__), capacitance–voltage (__C__ –__V__) and X‐ray diffraction (XRD) measurements. The barrier height of t