Electrical properties of multi p-n junction devices
โ Scribed by Katz, J.; Margalit, S.; Yariv, A.
- Book ID
- 114594122
- Publisher
- IEEE
- Year
- 1982
- Tongue
- English
- Weight
- 693 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0018-9383
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
The electrical properties of Schottky diodes and p-n junctions on GaSb ((100), doped with 2 x 10 t7 cm-~ tellurium) were examined. Capacitance-voltage measurements at 300 K show barrier heights of 0.65 eV (Al), 0.6 eV (Au, In, Pd), 0.5 eV (Ga) and 0.42 eV (Sb). The barrier heights tend to track the
## Abstract We have investigated the electrical and lightโemitting characteristics of (001)โoriented homoepitaxial diamond pโiโn junction diodes with the boronโdoped pโtype, nonโdoped intrinsic, and phosphorusโdoped nโtype layers formed by applying an optimized homoepitaxial growth technique based