## Abstract Electrical properties of diamond p–n diodes grown on (111) diamond substrate and processed by reactive ion etching are investigated. The diodes comprise a metallic ohmic contact on the top of a stack n^+^/n/p/p^+^/(111)C grown on a monocrystalline diamond substrate and an other ohmic co
Electrical properties of lateral p-n junction diodes fabricated by selective growth of n+diamond
✍ Scribed by Hoshino, Yuto ;Kato, Hiromitsu ;Makino, Toshiharu ;Ogura, Masahiko ;Iwasaki, Takayuki ;Hatano, Mutsuko ;Yamasaki, Satoshi
- Book ID
- 112181018
- Publisher
- John Wiley and Sons
- Year
- 2012
- Tongue
- English
- Weight
- 845 KB
- Volume
- 209
- Category
- Article
- ISSN
- 0031-8965
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