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Electrical Properties of Monocrystalline Uranium Diphosphide

✍ Scribed by Z. Henkie; W. Trzebiatowski


Book ID
104539019
Publisher
John Wiley and Sons
Year
1969
Tongue
English
Weight
535 KB
Volume
35
Category
Article
ISSN
0370-1972

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Electrical properties of bistable shallow donors in monocrystalline silicon which are introduced by proton implantation followed by annealing at 300-450 C have been studied by Hall effect and conductivity measurements. The temperature dependences of equilibrium and non-equilibrium carrier concentrat