Electrical properties of In/Yb/n-Hg1 −xCdxTe contacts

✍ Scribed by P. W. Leech

• Publisher: Springer US
• Year: 1994
• Tongue: English
• Weight: 249 KB
• Volume: 5
• Category: Article
• ISSN: 0957-4522
• DOI: 10.1007/bf00186190

✦ Synopsis

The specific contact resistance, p~, and the modified sheet R,k, of In/Hg I _,Cd,Te contacts incorporating a Yb diffusion barrier were measured as a function of the layer thickness and composition (x= 0.32-0.65). Significant increases in p~, were evident only for x >_ 0.56 and at Yb thicknesses between 2.5 and 6.0 nm, depending on the x-value. Analytical examination of the interfaces by Rutherford backscattering spectrometry (RBS) also showed a progressive reduction in the extent of inward diffusion of In with increasing.thickness of the Yb interlayer.