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Electrical properties of InP:Fe single crystals implanted by phosphorus ions

✍ Scribed by Radautsan, S. I. ;Tiginyanu, I. M. ;Pyshnaya, N. B.

Publisher
John Wiley and Sons
Year
1988
Tongue
English
Weight
122 KB
Volume
108
Category
Article
ISSN
0031-8965

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## Abstract Both p‐type and n‐type CuInSe~2~ single crystals were implanted with 40 keV ^130^Xe^+^ ions up to doses of 5 Β· 10^16^ cm^βˆ’2^. Implanted layers on p‐type substrates showed an initial increase of the resistivity followed by a continuous decrease of the resistivity at higher doses. Implant