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Electrical properties of InAs-SiO2-In2O3MIS structures with a modified interface

✍ Scribed by N. A. Valisheva; A. A. Guzev; A. P. Kovchavtsev; G. L. Kuryshev; T. A. Levtsova; Z. V. Panova

No coin nor oath required. For personal study only.

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