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Structural and electrical properties of thin SiO2 layers grown by RTP in a mixture of N2O and O2

✍ Scribed by A.J. Bauer; E.P. Burte

Book ID
115990386
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
265 KB
Volume
187
Category
Article
ISSN
0022-3093

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## Abstract Glancing‐angle deposition (GLAD) was used in this work to grow transparent oxide Cu~2~O thin films by annealing in air at 185 °C of copper films deposited firstly by this method onto glass substrates. The annealing temperature of 185 °C corresponds to the optimal temperature that corres