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Electrical properties of GeSi surface- and buried-channel p-MOSFETs fabricated by Ge implantation

✍ Scribed by Hong Jiang; Elliman, R.G.

Book ID: 114536352
Publisher: IEEE
Year: 1996
Tongue: English
Weight: 774 KB
Volume: 43
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.477598

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