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Electrical properties of DX centers in heavily Se-doped AlxGa1-xAs

โœ Scribed by A.C. Notari; B.J. Schrappe; P. Basmaji


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
253 KB
Volume
81
Category
Article
ISSN
0038-1098

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Multiconfigurate Character of the DX Cen
โœ A. Triki; H. Mejri; F. Rziga Ouaja; A. Selmi ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 96 KB ๐Ÿ‘ 2 views

Two statistics are developed using the multiconfigurate character of the DX center to analyse donors in n-type Al x Ga 1--x As:Si. The first statistics is derived assuming that the conduction electrons arise exclusively from DX centers. The second statistics supposes the existence of shallow donors