Multiconfigurate Character of the DX Cen
โ
A. Triki; H. Mejri; F. Rziga Ouaja; A. Selmi
๐
Article
๐
2001
๐
John Wiley and Sons
๐
English
โ 96 KB
๐ 2 views
Two statistics are developed using the multiconfigurate character of the DX center to analyse donors in n-type Al x Ga 1--x As:Si. The first statistics is derived assuming that the conduction electrons arise exclusively from DX centers. The second statistics supposes the existence of shallow donors