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Electrical properties of CoSi2 precipitates in cobalt-implanted silicon: a conducting atomic force microscopy study

✍ Scribed by J. M. Mao; J. B. Xu; Q. C. Peng; S. P. Wong; I. H. Wilson

Book ID
110237582
Publisher
Springer
Year
1997
Tongue
English
Weight
924 KB
Volume
17
Category
Article
ISSN
0261-8028

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## Ž . Ž . We have demonstrated the characterizations of the local electrical properties of ultrathin 1-4 nm SiO rSi 001 2 Ž y5 . structures using a conducting atomic force microscopy with a nanometer-scale resolution in a vacuum 1 = 10 Pa . The measurement in a vacuum enables to reduce the influe