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Electrical properties of CdTe:Ge crystals at a low coping level

✍ Scribed by M. I. Ilashchuk; O. A. Parfenyuk; A. V. Savitskii; K. S. Ul'yanitskii

Book ID
112370526
Publisher
Springer
Year
1993
Tongue
English
Weight
270 KB
Volume
36
Category
Article
ISSN
1573-9228

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## Abstract A model of Ge incorporation into CdTe lattice based on the analysis of temperature influence of post‐growth crystal annealing on CdTe:Ge electric properties is proposed. Ge impurity is mainly placed in Te sublattice in crystals fast cooled from high temperatures. Ge~Te~ defect is an acc