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Electrical properties of boron, phosphorus and gallium co-doped silicon

✍ Scribed by Erwann Fourmond; Maxime Forster; Roland Einhaus; Hubert Lauvray; Jed Kraiem; Mustapha Lemiti


Book ID
116425634
Publisher
Elsevier
Year
2011
Weight
756 KB
Volume
8
Category
Article
ISSN
1876-6102

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## Abstract Boron‐doped nanocrystalline silicon (nc‐Si:H) films were deposited by plasma‐enhanced chemical vapor deposition (PECVD). A variety of techniques, including X‐ray diffraction (XRD), Raman scattering (RS), UV–Vis–NIR spectroscopy and conductivity measurement were used to characterize the