𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electrical properties of Bi2S3thin films prepared by the dip-dry method

✍ Scribed by B. B. Nayak; H. N. Acharya

Publisher
Springer
Year
1986
Tongue
English
Weight
714 KB
Volume
21
Category
Article
ISSN
0022-2461

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Structural and Electrical Properties of
Structural and Electrical Properties of Annealed In–Bi2S3Thin Films
✍ R.SuΓ‘rez Parra; P.J. George; A.E. JimΓ©nez-Gonzalez; L. BaΓ±os; P.K. Nair πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 321 KB

Intrinsic bismuth sulfide deposited on indium thin films (&20 nm) change to n-type when annealed in air or nitrogen atmosphere. As deposited bismuth sulfide on the In films is amorphous and electrically very resistive. Annealing the films in air at 200, 300, and 400°°C results in the formation of In

Microstructural, optical and electrical
Microstructural, optical and electrical properties of GeO2 thin films prepared by sol-gel method
✍ Cheng-Hsing Hsu; Yi-Da He; Shu-Fong Yang πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 128 KB πŸ‘ 2 views

## Abstract GeO~2~ thin films were prepared by sol‐gel method on ITO/Glass substrate. The electrical and optical properties and the microstructures of these films were investigated with special emphasis on the effects of an annealing treatment in ambient air. The films were annealed at various temp