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Electrical properties and formation mechanism of porous silicon carbide

✍ Scribed by Konstantinov, A. O.; Harris, C. I.; Janzén, E.


Book ID
121232686
Publisher
American Institute of Physics
Year
1994
Tongue
English
Weight
479 KB
Volume
65
Category
Article
ISSN
0003-6951

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The electrical conduction properties of a heterostructure based on a stacked double-layer porous silicon structure have been investigated. Two layers of porous silicon (PS) with different porosities were inserted in an Au/PS/p:Si/Al structure. Transport properties of this structure have been investi