𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electrical properties and deep traps in ZnO films grown by molecular beam epitaxy

✍ Scribed by A. Y. Polyakov; N. B. Smirnov; A. I. Belogorokhov; A. V. Govorkov; E. A. Kozhukhova; A. V. Osinsky; J. Q. Xie; B. Hertog; S. J. Pearton


Book ID
126597771
Publisher
AVS (American Vacuum Society)
Year
2007
Tongue
English
Weight
628 KB
Volume
25
Category
Article
ISSN
0734-211X

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Deep hole traps in Be-doped Al0.2Ga0.8As
✍ J. Szatkowski; K. SieraΕ„ski; A. Hajdusianek; E. PΕ‚aczek-Popko πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 195 KB

Deep hole traps in Be doped p-type Al 0.2 Ga 0.8 As grown by molecular beam epitaxy have been studied by the deeplevel transient-spectroscopy method applied to samples with a Schottky diode configuration. Six hole traps, labeled as H1-H6, were found. Activation energies and capture cross sections ha