✦ LIBER ✦

Electrical modelling of Ion- Damaged GaAs schottky barrier interfaces

✍ Scribed by E. D. Cole; S. Sen; L. C. Burton

Book ID: 112816176
Publisher: Springer US
Year: 1989
Tongue: English
Weight: 296 KB
Volume: 18
Category: Article
ISSN: 0361-5235
DOI: 10.1007/bf02657783

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electric field dependence of GaAs Schott

Electric field dependence of GaAs Schottky barriers

✍ G.H. Parker; T.C. McGill; C.A. Mead; D. Hoffman 📂 Article 📅 1968 🏛 Elsevier Science 🌐 English ⚖ 375 KB

Electrical properties of metal-GaAs Scho

Electrical properties of metal-GaAs Schottky barriers

✍ M.S Tyagi 📂 Article 📅 1977 🏛 Elsevier Science 🌐 English ⚖ 636 KB

A study of Au/GaAs Schottky barriers wit

A study of Au/GaAs Schottky barriers with a cesiated interface

✍ Y.G. Wang; S. Ashok 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 253 KB

Electrical and electro-optical propertie

Electrical and electro-optical properties of GaAs-InSb "Schottky-barrier" heterojunctions

✍ Hinkley, E.D.; Rediker, R.H. 📂 Article 📅 1965 🏛 IEEE 🌐 English ⚖ 136 KB

Influence of reactive ion etching damage

Influence of reactive ion etching damage on the Schottky barrier height of Ti/p–Si interface

✍ N Fujimura; T Yamaguchi; H Kato; T Ito 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 328 KB

## Ž . Change in Schottky barrier height SBH of TirSi surface damaged by CHF rO plasma treatment was investigated as a 3 2 function of annealing temperature. SBH of the damaged interface was initially higher than that of clean interface. The SBH of damaged interface increased with increasing the a

Monte Carlo simulation of GaAs Schottky

Monte Carlo simulation of GaAs Schottky barrier behaviour

✍ Maziar, C.M.; Lundstrom, M.S. 📂 Article 📅 1987 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 306 KB