The crack onset strain (COS) of 4-level thin film transistor (TFT) devices on both steel foils and thin polyimide (PI) films was investigated using tensile experiments carried out in situ in an optical microscope. Cracks initiated first within the SiO 2 insulator layer for both types of substrates.
✦ LIBER ✦
Electrical contacts on polyimide substrates for flexible thin film photovoltaic devices
✍ Scribed by C. Guillén; J. Herrero
- Book ID
- 114085622
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 114 KB
- Volume
- 431-432
- Category
- Article
- ISSN
- 0040-6090
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