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Electrical conductivity of Si3N4-ZrO2composite at room temperature

✍ Scribed by Zhe Xiaoli; Wang Chongmin


Publisher
Springer
Year
1989
Tongue
English
Weight
228 KB
Volume
8
Category
Article
ISSN
0261-8028

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## Abstract In this paper the breakdown field strength and resistivity of sputter‐deposited Al~2~O~3~, SiO~2~ and Si~3~N~4~ layers are investigated in the temperature range between room temperature and 400 Β°C. All the investigated layers showed excellent insulation properties, even at elevated samp