Annealing effects on electrical and opti
โ
Jingchang Sun; Hongwei Liang; Jianze Zhao; Qiuju Feng; Jiming Bian; Ziwen Zhao;
๐
Article
๐
2008
๐
Elsevier Science
๐
English
โ 575 KB
## 2. Experimental procedures ZnO film was deposited on the SI-GaAs (100) substrate by MOCVD. Diethylzinc (DEZn) and O 2 were chosen as precursor of Zn and O, respectively, and high purity Ar was used as the carrying gas for DEZn. The mol flux ratio of Zn to O was kept at 1:250. The