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Electrical conduction and electroluminescence in nanocrystalline silicon-based light emitting devices

✍ Scribed by Prezioso, S.; Anopchenko, A.; Gaburro, Z.; Pavesi, L.; Pucker, G.; Vanzetti, L.; Bellutti, P.

Book ID
125837201
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
952 KB
Volume
104
Category
Article
ISSN
0021-8979

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✍ M. Wang; A. Anopchenko; A. Marconi; E. Moser; S. Prezioso; L. Pavesi; G. Pucker; πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 323 KB

In this paper we report the visible-near-infrared light emission properties of nanocrystalline silicon (nc-Si) light emitting devices (LEDs) based on nc-Si/SiO 2 multilayer structures. Multilayer structures of silicon-rich oxide (SRO) and SiO 2 were grown by plasma enhanced chemical vapor deposition